Journal article

Triplet Superconductivity from Nonlocal Coulomb Repulsion in an Atomic Sn Layer Deposited onto a Si(111) Substrate

S Wolf, D Di Sante, T Schwemmer, R Thomale, S Rachel

Physical Review Letters | Published : 2022

Abstract

Atomic layers deposited on semiconductor substrates introduce a platform for the realization of the extended electronic Hubbard model, where the consideration of electronic repulsion beyond the on-site term is paramount. Recently, the onset of superconductivity at 4.7 K has been reported in the hole-doped triangular lattice of tin atoms on a silicon substrate. Through renormalization group methods designed for weak and intermediate coupling, we investigate the nature of the superconducting instability in hole-doped Sn/Si(111). We find that the extended Hubbard nature of interactions is crucial to yield triplet pairing, which is f-wave (p-wave) for moderate (higher) hole doping. In light of p..

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University of Melbourne Researchers

Grants

Awarded by Horizon 2020 Framework Programme


Funding Acknowledgements

We acknowledge discussions with R. Claessen, J. Schafer, F. Adler, M. Laubach, P. R. Brydon, T. L. Schmidt, and J. Makler. This work is funded by the Australian Research Council through Grants No. FT180100211 and No. DP200101118, by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through Project-ID No. 258499086SFB 1170, and by the Wurzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter ct.qmat Project-ID No. 390858490-EXC 2147. The research leading to these results has received funding from the European Unions Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant Agreement No. 897276. We gratefully acknowledge the HPC facility Spartan hosted at the University of Melbourne and the Gauss Centre for Supercomputing e.V. for funding this project by providing computing time on the GCS Supercomputer SuperMUC at Leibniz Supercomputing Centre. The Flatiron Institute is a division of the Simons Foundation.